High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory
نویسندگان
چکیده
NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal– oxide–semiconductor memory device with NiSi nanocrystal–Al2O3/SiO2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperature of 85 C were demonstrated. 2011 Elsevier Ltd. All rights reserved.
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